VS-300CNQ045PBF www.vishay.com vishay semiconductors revision: 26-mar-14 1 document number: 94175 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky rectifier, 300 a features ? 150 c t j operation ? center tap module ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? ul approved file e222165 ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description the vs-300cnq... center tap sc hottky rectifier module series has been optimized for low reverse leakage at high temperature. the proprietary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in high curre nt switching power supplies, plating power supplies, ups systems, converters, freewheeling diodes, welding, and reverse battery protection. product summary i f(av) 300 a v r 45 v package to-244 circuit two diodes common cathode base common cathode lug terminal anode 1 lug terminal anode 2 to-244 major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 300 a v rrm 45 v i fsm t p = 5 s sine 27 000 a v f 150 a pk , t j = 125 c (per leg) 0.56 v t j range -55 to 150 c voltage ratings parameter symbol VS-300CNQ045PBF units maximum dc reverse voltage v r 45 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average ? forward current ? see fig. 5 per leg i f(av) 50 % duty cycle at t c = 111 c, rectangular waveform 150 a per device 300 maximum peak one cycle non-repetitive surg e current per leg see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 27 000 10 ms sine or 6 ms rect. pulse 2400 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 18 a, l = 1 mh 150 mj repetitive avalanche current per leg i ar current decaying linear ly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 30 a
VS-300CNQ045PBF www.vishay.com vishay semiconductors revision: 26-mar-14 2 document number: 94175 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % ? fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage electrical specifications parameter symbol test conditions values units maximum forward volt age drop per leg ? see fig. 1 v fm (1) 150 a t j = 25 c 0.61 v 300 a 0.77 150 a t j = 125 c 0.56 300 a 0.75 maximum reverse leakage current per leg see fig. 2 i rm (1) t j = 25 c v r = rated v r 15 ma t j = 125 c 1100 maximum junction capacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 7750 pf typical series inductance per leg l s from top of terminal ho le to mounting plane 6.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 55 - 150 c thermal resistance, ? junction to case per leg r thjc - - 0.28 c/w per module - - 0.14 thermal resistance, case to heatsink r thcs -0.10- weight -68- g -2.4- oz. mounting torque 35.4 (4) - 53.1 (6) lbf ?? in (n ?? m) mounting torque center hole 30 (3.4) - 40 (4.6) terminal torque 30 (3.4) - 44.2 (5) vertical pull - - 80 lbf ?? in 2" lever pull - - 35 1 10 100 1000 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.2 0.6 1.2 1.4 0.8 0.4 0 1.0 t j = 150 c t j = 125 c t j = 25 c 0.01 0.1 1 10 100 1000 10 000 i r - reverse current (ma) v r - reverse voltage (v) 515 30 40 45 35 20 10 0 25 t j = 150 c t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c
VS-300CNQ045PBF www.vishay.com vishay semiconductors revision: 26-mar-14 3 document number: 94175 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics 1000 10 000 c t - junction capacitance (pf) v r - reverse voltage (v) 515 304045 35 20 10 025 t j = 25 c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1.0 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 10 single pulse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 i f(av) - average forward current (a) allowable case temperature (c) 0 50 100 150 200 250 60 80 100 120 140 160 dc square wave (d = 0.50) 80 % rated v r applied see note (1) i f(av) - average forward current (a) average power loss (w) 0 20 40 60 80 100 120 140 dc rms limit 0 50 100 150 200 250 d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20
VS-300CNQ045PBF www.vishay.com vishay semiconductors revision: 26-mar-14 4 document number: 94175 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - maximum non-repeti tive surge current (per leg) fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r ? ordering information table links to related documents dimensions www.vishay.com/doc?95021 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 1000 10 000 100 000 at any rated load condition and with rated v rrm applied following surge 10 100 1000 10 000 current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 25 v l irfp460 40hfl40s02 - average current rating (x 10) - product silicon identification - c = circuit configuration - n = not isolated - q = schottky rectifier diode - voltage rating (045 = 45 v) - lead (pb)-free device code 30 0 c n q 045 pbf 1 - vishay semiconductors product 2 3 4 5 6 7 8 5 1 3 2 4 6 7 8 vs-
document number: 95021 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 25-jun-07 1 to-244 outline dimensions vishay semiconductors dimensions in millimeters (inches) 3 2 3 1 ? 5.2 (? 0.20) 9.6 (0.37) min. 93 (3.66) max. ?" - 20 unc 80 (3.15) 13 (0.51) 35 (1.37) ref. 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 21 (0.82) 20 (0.78) ? 7.2 (? 0.28) (2 places) 12.6 (0.5)
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